Journal article
IEEE Transactions on Electron Devices, vol. 67, 2020, pp. 5201-5208
Process Engineer|Research Engineer
Applied Physics
Trinity College Dublin
APA
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Verma, A., Borisov, K., Connaughton, S., & Stamenov, P. (2020). Hall Effect Measurements in Rotating Magnetic Field on Sub-30-nm Silicon Nanowires Fabricated by a Top–Down Approach. IEEE Transactions on Electron Devices, 67, 5201–5208. https://doi.org/10.1109/TED.2020.3023060
Chicago/Turabian
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Verma, Akshara, Kiril Borisov, Stephen Connaughton, and Plamen Stamenov. “Hall Effect Measurements in Rotating Magnetic Field on Sub-30-Nm Silicon Nanowires Fabricated by a Top–Down Approach.” IEEE Transactions on Electron Devices 67 (2020): 5201–5208.
MLA
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Verma, Akshara, et al. “Hall Effect Measurements in Rotating Magnetic Field on Sub-30-Nm Silicon Nanowires Fabricated by a Top–Down Approach.” IEEE Transactions on Electron Devices, vol. 67, 2020, pp. 5201–08, doi:10.1109/TED.2020.3023060.
BibTeX Click to copy
@article{verma2020a,
title = {Hall Effect Measurements in Rotating Magnetic Field on Sub-30-nm Silicon Nanowires Fabricated by a Top–Down Approach},
year = {2020},
journal = {IEEE Transactions on Electron Devices},
pages = {5201-5208},
volume = {67},
doi = {10.1109/TED.2020.3023060},
author = {Verma, Akshara and Borisov, Kiril and Connaughton, Stephen and Stamenov, Plamen}
}