In the pursuit of sub-20 nm features, we employ Electron Beam Lithography on HSQ resist. Our process begins by fabricating silicon (Si) nanowires on SOI (Silicon-on-Insulator) substrates using lithography and reactive ion etching (RIE). This ensures structural integrity and precise dimensions. To form Hall contact electrodes, we utilize angled substrate evaporation, achieving optimal sidewall contact. For accurate assessment, we analyze electrical contacts using the secondary electrons voltage contrast technique. To characterize the devices, we perform measurements at both room temperature and cryogenic temperatures. These measurements allow us to determine resistivity, mobility, and carrier density. Specifically, we conduct both DC and AC Hall effect measurements on these Si nanowires. The AC measurements involve two distinct options: 1) magnetic field sweeping in the range of ±14T and 2) rotating the sample under a constant magnetic field at +14T.